Optical, structural and photoelectron spectroscopic studies on amorphous and crystalline molybdenum oxide thin films |
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Authors: | Tarsame S Sian G B Reddy |
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Affiliation: | Thin Film Laboratory, Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi 110016, India |
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Abstract: | Optical, structural and electronic properties of amorphous and crystalline molybdenum oxide thin films have been investigated. As-deposited amorphous films got crystallized into a layered orthorhombic phase on annealing at 350°C. Refractive index (n) and extinction coefficient (k) of as-deposited films and films annealed at 150°C, 240°C and 350°C have been calculated using reflectance and transmittance data. Spectral dependence of absorption coefficient has been explained on the basis of charge transfer transition mechanism. Optical band gap of amorphous MoO3−x is 3.16 eV and it has increased by 0.11 eV on crystallization. XPS core level analysis reveals the presence of Mo+4, Mo+5 and Mo+5 oxidation states in amorphous films, proving oxygen deficiency in as-deposited films. Same studies on crystalline films show the presence of only Mo+6 states. Valence band spectrum of amorphous films reveal emission from Mo4d levels, which is absent in crystalline films. Complete correlation is seen between the optical properties and XPS data. |
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Keywords: | Optical properties Electronic properties Core level spectra Valence band spectra Energy band diagram |
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