| VGF法GaAs单晶位错分布的数值模拟和Raman光谱研究 |
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| 引用本文： | 涂凡,苏小平,屠海令,张峰燚,丁国强,王思爱.VGF法GaAs单晶位错分布的数值模拟和Raman光谱研究[J].稀有金属,2010,34(2). |
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| 作者姓名： | 涂凡 苏小平 屠海令 张峰燚 丁国强 王思爱 |
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| 作者单位： | 北京有色金属研究总院北京国晶辉红外光学科技公司,北京,100088 |
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| 摘 要： | 采用数值模拟技术和Raman光谱法对4inch垂直梯度凝固(VGF)法GaAs单晶位错进行了研究。运用数值模拟软件计算了GaAs晶体生长过程中的位错分布,模拟计算与实验结果一致。通过Raman光谱测量,定量计算了晶片表面的残余应力分布。Raman测量结果表明,残余应力与位错密度分布基本一致。在VGF法生长的GaAs单晶中观察到了不完整的位错胞状结构,并利用Raman光谱法对其进行了微区分析。
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| 关 键 词： | 数值模拟 位错密度 残余应力 Raman光谱法 位错胞状结构 |
Dislocation Distribution in VGF GaAs Single Crystal by Numerical Simulation and Raman Spectroscopy |
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| Tu Fan,Su Xiaoping,Tu Hailing,Zhang Fengyi,Ding Guoqiang,Wang Siai.Dislocation Distribution in VGF GaAs Single Crystal by Numerical Simulation and Raman Spectroscopy[J].Chinese Journal of Rare Metals,2010,34(2). |
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| Authors: | Tu Fan Su Xiaoping Tu Hailing Zhang Fengyi Ding Guoqiang Wang Siai |
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| Affiliation: | Tu Fan,Su Xiaoping,Tu Hailing,Zhang Fengyi,Ding Guoqiang,Wang Siai(General Research Institute for Non-Ferrous Metals,Guojing Infrared Optical Technology Co.,Ltd,Beijing 100088,China) |
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| Abstract: | The numerical simulation and Raman spectroscopy were employed to study the dislocations in the VGF(Vertical Gradient Freeze)GaAs single crystal.Dislocation distribution was calculated and the numerical results were in good agreement with the experimental results.Raman spectroscopy was used to calculate the residual stress on the wafer quantitatively.The residual stress distribution was similar to the dislocation density distribution evaluated by KOH melt etching.The dislocation arrangement without completed... |
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| Keywords: | GaAs numerical simulation GaAs dislocation density residual stress Raman spectroscopy dislocation cell patterns |
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