Hot-carrier effects in thin-film fully depleted SOI MOSFET's |
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| Authors: | Ma Z.J. Wann H.J. Chan M. King J.C. Cheng Y.C. Ko P.K. Hu C. |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
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| Abstract: | Previous conflicting reports concerning fully depleted SOI device hot electron reliability may result from overestimation of channel electric field (Em). Experimental results using SOI MOSFET's with body contacts indicate that Em is just a weak function of thin-film SOI thickness (Tsi and that Em can be significantly lower than in a bulk device with drain junction depth (X j) comparable to SOI's Tsi. The theoretical correlation between SOI MOSFET's gate current and substrate current are experimentally confirmed. This provides a means (IG) of studying Em in SOI device without body contacts. Thin-film SOI MOSFET's have better prospects for meeting breakdown voltage and hot-electron reliability requirements than previously thought |
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