Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Photoluminescence of Ga_0.94In_0.06As_0.13Sb_0.87 solid solution lattice matched to InAs

Authors:	K D Moiseev M P Mikhailova Yu P Yakovlev T ime ek E Hulicius J Oswald

Affiliation:	^a A.F. Ioffe Physical Technology Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia ^b Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16253 Prague, Czech Republic

Abstract:	The lattice matched Ga_0.94In_0.06As_0.13Sb_0.87 quaternary solid solutions were grown by liquid phase epitaxy on (1 0 0) oriented InAs substrates from In rich melt. The p-type GaIn_0.06As_0.13Sb layers were intentionally undoped and their hole concentration was about p5×10¹⁶ cm⁻³, while n-type GaIn_0.06As_0.13Sb layers were slightly doped with Te and their electron concentration was about n10¹⁷ cm⁻³. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.

Keywords:	Semiconductors III–V Photoluminescence
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