| 金属有机物化学气相沉积GaAs／Si外延层中1.13eV发光带特性研究 |
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| 引用本文： | 赵家龙,梁家昌.金属有机物化学气相沉积GaAs／Si外延层中1.13eV发光带特性研究[J].红外与毫米波学报,1995,14(4):271-276. |
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| 作者姓名： | 赵家龙 梁家昌 |
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| 作者单位： | 中国科学院长春物理研究所，中国民用航空学院，中国科学院西安光机所 |
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| 基金项目： | 国家自然科学基金,中国科学院长春物理研究所激发态物理开放研究实验室资助 |
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| 摘 要： | 用不同温度和激发强度下的近红外光致发光研究了金属有机物化学气相沉积方法在Ｓｉ衬底上生长的ＧａＡｓ外延层中的１．１３ｅＶ发光带的发光特性，表明此发光带为施主－受主对复合发光．根据１．１３ｅＶ发光带的峰值能量和发光强度随温度和激发强度的变化关系，确定施主和受主的束缚能分别为５和２９５ｍｅＶ，并证实ＧａＡｓ／Ｓｉ外延层中的１．１３ｅＶ发光为硅施主－镓空位受主对的复合发光．
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| 关 键 词： | 光致发光 深能级 外延层 砷化镓 |
CHANACTERISTIC STUDY OF 1. 13eV PBOYOLUMINESCENCE BAND IN GaAs EPILAYERS GROWN ON Si BY MOCVD |
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| Zhao Jialong,Gao Ying,Liu Xueyan,Don Kai,Huang Shihu,Yu Jiaqi.CHANACTERISTIC STUDY OF 1. 13eV PBOYOLUMINESCENCE BAND IN GaAs EPILAYERS GROWN ON Si BY MOCVD[J].Journal of Infrared and Millimeter Waves,1995,14(4):271-276. |
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| Authors: | Zhao Jialong Gao Ying Liu Xueyan Don Kai Huang Shihu Yu Jiaqi |
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| Abstract: | study of the 1.13eV photoluminescence(PL)band in GaAs epilayers grown on St by metal-organic chemical vapor deposition(MOCVD)was made at various temperatures and excitation intensities. The 1.13eV PL band can be explained in terms of the recombination luminescence of the donor-acceptor pair. Changes in PL emission energy and PL intensity as a function of temperature and excitation intensity lead to the identification of a 295meV deep acceptor and a smeV shallow donor.It was verified that the 1.13 eV PL band originates from the recombination luminescence of a St donor on Ga site and the nextnearest neighbor Ga vacancy acceptor. |
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| Keywords: | near-infrared photoluminescence deep level GaAs/Si |
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