Identification of strained black phosphorous by Raman spectroscopy

Phosphorene has a very high hole mobility and can be a tuned band structure, and has become an ideal material for electronic devices. For this new type of two-dimensional material, in the applied strain, black phosphorus (BP) can be changed into an indirect band gap and metallic materials from the direct band gap semiconductor material, which greatly affect its inherent physical characteristics. How to identify strained microstructure changes becomes an important problem. The calculated Raman spectra disclose that the A_g² mode and B_2g mode will split and the Raman spectra appear, while the A_g¹ mode is shifted to low-frequency region. The deformation induced by strain will effectively change the Raman mode position and intensity, this can be used to identify phosphorus changes.