| 基于标准CMOS工艺的Si基光发射器件 |
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| 引用本文： | 黄春红,牛萍娟,杨广华,王伟.基于标准CMOS工艺的Si基光发射器件[J].微纳电子技术,2008,45(10). |
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| 作者姓名： | 黄春红 牛萍娟 杨广华 王伟 |
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| 作者单位： | 天津工业大学,信息与通信工程学院,天津,300160 |
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| 摘 要： | 基于反偏雪崩击穿的发光原理,按照Chartered 0.35μm标准CMOS工艺要求,设计并制作了一种Si基光发射器件。在室温下对器件特性进行了初步测试,正向导通电压为0.75V,反向击穿电压为8.4V,能够在一个较宽的电压范围(8.4～12V)内稳定工作。总结了工艺对器件电学特性的影响,并将该器件结构与Snyman等人研究的器件结构进行了比较分析。该器件较强的边缘发光在平面结构的Si基片上集成光互联系统中将会有一定的应用价值。
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| 关 键 词： | 互补金属氧化物半导体工艺 Si基光发射器件 边缘发光 光电集成电路 光互连 |
Si-Based Light Emitting Devices with Standard CMOS Technology |
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| Huang Chunhong,Niu Pingjuan,Yang Guanghua,Wang Wei.Si-Based Light Emitting Devices with Standard CMOS Technology[J].Micronanoelectronic Technology,2008,45(10). |
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| Authors: | Huang Chunhong Niu Pingjuan Yang Guanghua Wang Wei |
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| Affiliation: | Huang Chunhong,Niu Pingjuan,Yang Guanghua,Wang Wei(School of Information , Communication,Tianjin Polytechnic University,Tianjin 300160,China) |
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| Abstract: | A new Si-based light emitting device was designed and realized under reverse bias conditions by using standard 0.35 μm CMOS processes.The characteristics of the device were primaryly tested at room temperature.It can be turned on at forward bias of 0.75 V and at reverse bias of 8.4 V.It shows that the device can work normally in a wide voltage range,which is from 8.4 V to 12 V.The effect of the process on I-V characteristic of the device was concluded,and the device was compared with a typical structure device designed by Snyman et al.It can be used in all sillion on-chip optical interconnection system with planar structure because of obvious edge light emitting. |
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| Keywords: | CMOS(complementary metal-oxide-semiconductor)prosses Si-based LED edge light emitting OEIC(optoelectronic integrated circuit) optical interconnection |
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