Drift mobility of carriers in porous silicon |
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| Authors: | N. S. Averkiev L. P. Kazakova É. A. Lebedev N. N. Smirnova |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnichiskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | The drift mobility of carriers in porous silicon has been studied in a wide temperature range (190–360 K) at electric field strengths of 2×103–3×104 V/cm. An exponential temperature dependence of the hole drift mobility with an activation energy of d ～ 0.14 eV was established. The density of localized states controlling the transport is evaluated. |
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