单刀双掷RF MEMS开关的研究与设计

介绍了一种基于横向金属接触的DC-5GHz单刀双掷RF MEMS开关的研究与设计．横向金属接触开关包括了一套有限的共面波导（FGCPW）传输线和左右摆动的悬臂梁．为了降低开启电压，设计了一种曲折型的折叠梁结构，通过理论分析与仿真实验验证了该结构的可行性，并利用MetalMUMPs工艺加以实现．测试结果显示，该开关在5GHz处的插入损耗为0．8dB，回波损耗大于20dB，隔离度为40dB．测得最低开启电压为33V．

Research and Design of SPDT RF MEMS Switch

A 0~5GHz single-pole double-throw(SPDT)switching circuit using lateral metal-contacting MEMS switches is demonstrated.The MEMS switch consists of a set of quasi-finite ground coplanar waveguide(FGCPW)transmission lines and a right and left swing cantilever beam.A folded cantilever beam is proposed to reduce the driving voltage,and the structure is proven by theoretical analysis and simulation.The switches were successfully fabricated using the MetalMUMP process.At 5GHz,the measured insertion loss of the SPDT switching circuit is below 0.8dB,the return loss is higher than 20dB,and the isolation is as high as 40dB.The smallest pull-in voltage of the switches is 33V.