Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

An investigation was made of continuous tuning of the emission wavelength in two types of InAsSb/InAsSbP diode heterolasers: three-layer structures with combined electrical and optical confinement and five-layer structures with separate confinement. In three-layer structures the emission wavelength initially decreases by 2–4 Å with increasing current and then increases by 10–15 Å. In five-layer structures the emission wavelength mainly decreases. This difference is attributed to the better flow of carriers in the bulk of the active region in five-layer structures as compared with three-layer ones. Pis’ma Zh. Tekh. Fiz. 24, 77–84 (March 26, 1998)