Quantum wells on 3<Emphasis Type="Italic">C</Emphasis>-SiC/<Emphasis Type="Italic">NH</Emphasis>-SiC heterojunctions. Calculation of spontaneous polarization and electric field strength in experiments |
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Authors: | I S Sbruev S B Sbruev |
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Affiliation: | 1.Moscow Aviation Institute,Moscow,Russia |
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Abstract: | The results of experiments with quantum wells on 3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions obtained by various methods are reconsidered. Spontaneous polarizations, field strengths, and energies
of local levels in quantum wells on 3C-SiC/NH-SiC heterojunctions were calculated within a unified model. The values obtained are in agreement with the results of all
considered experiments. Heterojunction types are determined. Approximations for valence band offsets on heterojunctions between
silicon carbide polytypes and the expression for calculating local levels in quantum wells on the 3C-SiC/NH-SiC heterojunction are presented. The spontaneous polarizations and field strengths induced by spontaneous polarization on
3C-SiC/4H-SiC and 3C-SiC/6H-SiC heterojunctions were calculated as 0.71 and 0.47 C/m2 and 0.825 and 0.55 MV/cm, respectively. |
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