| 直流反应磁控溅射法注积ZrN薄膜 |
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| 引用本文： | 吴大维,张志宏,罗海林,郭怀喜,范湘军. 直流反应磁控溅射法注积ZrN薄膜[J]. 材料研究学报, 1997, 0(2) |
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| 作者姓名： | 吴大维 张志宏 罗海林 郭怀喜 范湘军 |
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| 作者单位： | 武汉大学 |
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| 摘 要： | 采用直流反应磁控溅射法淀积ZrN薄膜发现在（100）晶向硅片上ZrN薄膜按（111）晶向生长，控制生长工艺可以获得ZrN（111）晶向的外延生长膜．
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| 关 键 词： | ZrN薄膜 DC反应磁控溅射 外延生长 薄膜电阻材料 |
PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING |
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| WU Dawei, ZHANG Zhihong, LUO Hailin, GUO Huaixi, FAN Xiangjun. PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING[J]. Chinese Journal of Materials Research, 1997, 0(2) |
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| Authors: | WU Dawei ZHANG Zhihong LUO Hailin GUO Huaixi FAN Xiangjun |
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| Abstract: | ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditions,a (111) oriented epitaxial ZrN film could be obtained. The chemical properties and thermal stability were also investigated. |
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| Keywords: | Zirconium nitride film DC reactive magnetron sputtering epitaxial growth film resistance material |
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