Simulation and analysis of amorphous silicon image sensor having a p−i−n structure |
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Authors: | C -Y Su H -L Hwang |
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Affiliation: | Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30043, People's Republic of China |
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Abstract: | The current-voltage characteristics of a p?i?n a-Si : H contact image sensor under dark and illuminated conditions have been simulated by solving the Poisson's equation and the continuity equations, and the results are correlated with the experiments. The dependence of the dark and photo-currents on the parameters such as the density of states in the gap, intrinsic layer width, dopant concentrations of p+ layer and n+ layer are discussed. |
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