| 异质栅非对称Halo SOI MOSFET亚阈值电流模型 |
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| 引用本文： | 栾苏珍,刘红侠,贾仁需,王瑾. 异质栅非对称Halo SOI MOSFET亚阈值电流模型[J]. 半导体学报, 2008, 29(4): 746-750 |
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| 作者姓名： | 栾苏珍 刘红侠 贾仁需 王瑾 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 |
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| 基金项目： | 国家自然科学基金 , 教育部跨世纪优秀人才培养计划 , 国防科技预研项目 , 陕西省西安市科技计划 , 教育部重点科技研究资助项目 |
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| 摘 要： | 在沟道源端一侧引入高掺杂Halo结构的异质栅SOI MOSFET,可以有效降低亚阈值电流.通过求解二维泊松方程,为该器件建立了亚阈值条件下的表面势模型.利用常规漂移.扩散理论,在表面势模型的基础上,推导出新结构器件的亚阈值电流模型.为了求解简单,文中给出了一种分段近似方法,从而得到表面势的解析表达式.结果表明,所得到的表面势解析表达式和确切解的结果高度吻合.二维器件数值模拟器ISE验证了通过表面势解析表达式得到的亚阈值电流模型,在亚阈值区二者所得结果吻合得很好.
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| 关 键 词： | 异质栅 SOI MOSFET 亚阈值电流 二维解析模型 |
| 文章编号： | 0253-4177(2008)04-0746-05 |
| 修稿时间： | 2007-10-08 |
A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos |
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| Luan Suzhen,Liu Hongxi,Jia Renxu and Wang Jin. A Two-Dimensional Subthreshold Current Model for Dual Material Gate SOI nMOSFETs with Asymmetric Halos[J]. Chinese Journal of Semiconductors, 2008, 29(4): 746-750 |
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| Authors: | Luan Suzhen Liu Hongxi Jia Renxu Wang Jin |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China |
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| Abstract: | A two-dimensional(2D)model for the subthreshold current in a dual-material gate silicon-on-insulator(SOI)MOSFET with a single halo is presented.The model considers a single halo doping in the channel near the source and a dual material gate to derive the channel potential using the explicit solution of the 2D Poisson's equation.This,together with conventional drift-diffusion theory,results in the development of a subthreshold current model for the novel structure.Model verification is carried out using the ... |
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| Keywords: | dual material gate SOI MOSFET subthreshold current 2D modeling |
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