Enhanced relaxation oscillation frequency of 1.3 μmstrained-layer multiquantum well lasers |
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| Authors: | Kito M. Otsuka N. Ishino M. Fujihara K. Matsui Y. |
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| Affiliation: | Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka; |
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| Abstract: | Dependence of relaxation oscillation frequency (fr) on the bandgap wavelength of InGaAsP barrier layers (λg b) and number of quantum wells (Nw) were investigated for the first time, for 1.3 μm InGaAsP/InGaAsP compressively strained multiquantum well (MQW) lasers. 1.3 times higher fr was confirmed for strained-layer MQW lasers with large N w (Nw⩾7) and wide bandgap barrier layers (λgb=1.05 μm) at the same injection level, compared with unstrained MQW lasers having the same well thicknesses and the same emitting wavelength. This enhancement mainly results from increased differential gain due to strain effects separated from the quantum-size effect |
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