首页 | 本学科首页   官方微博 | 高级检索  
     


A high-frequency semiconductor generator of high-voltage nanosecond pulses
Authors:V. B. Voronkov  I. V. Grekhov  A. K. Kozlov  S. V. Korotkov  A. L. Stepanyants  D. V. Khristyuk
Affiliation:1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia
Abstract:A generator of high-voltage rectangular nanosecond pulses equipped with switches in the form of assemblies of deep-level dynistors connected in series is described. A control circuit for dynistors based on an assembly of inversely switched-off diodes connected in series is considered. The generator can operate at a frequency of 10 Hz and form (at a 20-pF load) rectangular voltage pulses with short (4 ns) leading and trailing edges and a short (25 ns) delay relative to an external control signal. The amplitude and duration of output pulses are controlled smoothly in the ranges 7–9 kV and 100–600 ns, respectively. The spread of moments of operation is within 0.5 ns.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号