Preparation and luminescence characterization of GGAG:Ce3+,B3+ for a white light-emitting diode期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Preparation and luminescence characterization of GGAG:Ce3+,B3+ for a white light-emitting diode

Authors:	Jun-Gill Kang Myung-Kyo Kim Kwang-Bok Kim

Affiliation:	1. Department of Materials Science and Engineering, Clemson University, Clemson, SC, USA;2. CREOL, College of Optics and Photonics, University of Central Florida, Orlando, FL, USA;3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA;4. Institute of Mathematics and Physics, Opole University of Technology, Opole, POLAND;5. Department of Physics and Astronomy, Austin Peay State University, Clarksville, TN, USA;6. Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA, USA

Abstract:	We prepared Gd₃Ga₂Al₃O₁₂ (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a function of the B³⁺ concentration. The luminescence intensity was enhanced markedly by adding B³⁺ as a co-dopant. The non-boron-doped GGAG:Ce³⁺ converted less than 10% of the absorbed blue light into luminescence. As the B³⁺ concentration increased, Q increased and reached a maximum of Q = 21% at 1.5 moles in GGAG:Ce³⁺. White light closer to daylight with good color-rendering index properties was generated with the proper combination of yellow emission from GGAG:Ce³⁺,B³⁺ and blue emission from a GaN chip.

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