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Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation |
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| Authors: | M Lamhamdi P Pons U Zaghloul L Boudou F Coccetti J Guastavino Y Segui G Papaioannou R Plana |
| Affiliation: | 1. University of Toulouse LAAS CNRS, 7, avenue du Colonel Roche, 31077 Toulouse, France;2. University of Toulouse LAPLACE, 118, route de Narbonne, 31077 Toulouse, France;3. Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 15784, Greece;1. IMEC, Kapeldreef 75, Leuven B-3001, Belgium;2. University of Twente, Postbus 217, Enschede, 7500 AE, Netherlands;3. FB 2.047, NXP Semiconductors, Gerstweg 2, Nijmegen, 6534 AE, Netherlands;1. Instituto de Magnetismo Aplicado, UCM-ADIF-CSIC, P.O. Box 155, Las Rozas 28230, Spain;2. Departamento de Física de Materiales, Universidad Complutense de Madrid, Madrid 28040, Spain;1. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstraße 2, 79110 Freiburg, Germany;2. Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Straße 21, 79104 Freiburg, Germany |
| Abstract: | In this paper, we study the effect of stress voltage and temperature on the dielectric charging and discharging processes of silicon nitride thin films used in RF-MEMS capacitive switches. The investigation has been performed on PECVD-SiNx dielectric materials deposited under different deposition conditions. The leakage current was found to obey the Poole–Frenkel law. The charging current decay was found to be affected by the presence of defects which are generated by electron injection at high electric fields. At high temperatures power law decay was monitored. Finally, the temperature dependence of leakage current revealed the presence of thermally activated mechanisms with similar activation energies in all materials. |
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