MIMC reliability and electrical behavior defined by a physical layer property of the dielectric |
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| Authors: | J. Ackaert R. Charavel K. Dhondt B. Vlachakis L. De Schepper M. Millecam E. Vandevelde P. Bogaert A. Iline E. De Backer A. Vlad J.-P. Raskin |
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| Affiliation: | 1. Basel Institute for Clinical Epidemiology and Biostatistics, University Hospital Basel, Basel, Switzerland;2. Department of Health Research Methods, Evidence, and Impact, McMaster University, Hamilton, ON, Canada;3. Academy of Swiss Insurance Medicine, University Hospital Basel, Basel, Switzerland;4. Epidemiology, Biostatistics and Prevention Institute, University of Zurich, Zurich, Switzerland;5. Department of Neonatology, University Hospital Zurich, University of Zurich, Zurich, Switzerland;6. German Cochrane Centre, Medical Center, University of Freiburg, Freiburg, Germany;7. Center of Research in Epidemiology and Statistics Sorbonne Paris Cité–U1153, INSERM/Université Paris Descartes, Cochrane France, Hôpital Hôtel-Dieu, Paris Cedex 04, France;8. Cochrane Switzerland, Institute of Social and Preventive Medicine, Lausanne University Hospital, Lausanne, Switzerland;9. Department of Medicine, McMaster University, Hamilton, ON, Canada;10. Centre de Recherche Clinique du Centre Hospitalier Universitaire de Sherbrooke, Université de Sherbrooke, Sherbrooke, QC, Canada;11. Department of Health and Society, Austrian Federal Institute for Health Care, Vienna, Austria;12. Departments of Urology and Public Health, Helsinki University Hospital and University of Helsinki, Helsinki, Finland;13. Department of Internal Medicine, Pontificia Universidad Catolica de Chile, Santiago, Chile;14. Evidence-Based Dentistry Unit, Faculty of Dentistry, Universidad de Chile, Santiago, Chile;15. Michael G. DeGroote Institute for Infectious Diseases Research, McMaster University, Hamilton, ON, Canada;16. Department of Internal Medicine, American University of Beirut, Beirut, Lebanon;17. Chinese Evidence-based Medicine Center, West China Hospital, Sichuan University, Chengdu, China;18. Department of Anesthesia, McMaster University, Hamilton, ON, Canada;19. Michael G. DeGroote Institute for Pain Research and Care, McMaster University, Hamilton, ON, Canada;20. Epidemiology Unit, Department of Cardiology, Vall d''Hebron Hospital and CIBER de Epidemiología y Salud Publica (CIBERESP), Barcelona, Spain;21. Institute of Nuclear Medicine, University Hospital Bern, Bern, Switzerland;22. IRCCS Orthopedic Institute Galeazzi, Milano, Italy;23. Department of Surgery, University Hospital Basel, Basel, Switzerland;24. Department of Anesthesia and Pain Medicine, The Hospital for Sick Children, University of Toronto, Toronto, ON, Canada;25. Stanford Prevention Research Center, Stanford University, Stanford, CA;26. Department of Medicine, Innlandet Hospital Trust-Division Gjøvik, Oppland, Norway;27. Institute of Health Policy, Management and Evaluation, Dalla Lana School of Public Health, University of Toronto, Toronto, ON, Canada;28. Department of Haematology/Oncology and Palliative Care, Klinikum Stuttgart, Stuttgart, Germany;29. Department of Clinical Research, University of Basel, Basel, Switzerland;1. Basel Institute for Clinical Epidemiology and Biostatistics;2. Academy of Swiss Insurance Medicine;3. Department of Oncology, University Hospital of Basel, Basel;4. Cochrane Switzerland, Institute of Social and Preventive Medicine (IUMSP), Lausanne University Hospital, Lausanne, Switzerland;5. Department of Clinical Epidemiology and Biostatistics;6. Department of Medicine, McMaster University, Hamilton, Canada;7. German Cochrane Centre, Medical Center—University of Freiburg, Freiburg, Germany;8. Epidemiology, Biostatistics and Prevention Institute, University of Zurich, Zurich;9. Department of Clinical Research, University of Basel, Basel, Switzerland;10. Department of Medical Oncology, Royal Marsden Hospital, London, UK |
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| Abstract: | Metal–insulator–metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime, breakdown voltage and leakage current. In this article, the correlation is determined between these electrical properties and the physical and chemical properties of the SiN dielectric layer. It is demonstrated how a SiN dielectrics with a high refractive index have high Si content and show an increased initial leakage current. However, contradictory to the high leakage current, these dielectrics also show high lifetimes. It is shown that SiN dielectrics with a high Si content contain high numbers of charge trapping centers. Over time, a high concentration of trapped charges is build up to such an extend that the local electric field over the dielectric is significantly decreased. This results in the observed reliability improvement of the dielectric. The final intrinsic quality and reliability of MIMC capacitors can therefore be determined by measurable physical properties of the MIMC dielectric at the time of the deposition of this layer. |
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