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Simulation of migration effects in nanoscaled copper metallizations
Authors:Kirsten Weide-Zaage  Farzan Kashanchi  Oliver Aubel
Affiliation:1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;2. Materials, Phys. and Energy Eng., Nagoya Univ., Aichi 464-8603, Japan;1. Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;2. Department of Electronic Engineering, Ming-Chuan University, 5 De Ming Rd., Gui Shan, Taoyuan 333 Taiwan, ROC;3. Department of Mechanical Engineering, Chung Yuan Christian University, 200, Chung Pei Rd., Chung Li, Taoyuan 320 Taiwan, ROC;4. Department of Mechatronic Technology, National Taiwan Normal University, 162, Sec. 1, Heping E. Rd., Taipei 106 Taiwan, ROC;1. Polymer Ionics Research Group, Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00–664 Warsaw, Poland;2. CIC Energigune, Parque Tecnológico de Álava, Albert Einstein, 48, ED.CIC, 01510 Miñano, Álava, Spain
Abstract:The shrinking of copper interconnect dimensions for the 32 nm technology node and beyond leads to an increase of the interconnect material resistivity. Especially copper is described to have an increase of resistivity of about 50% at room temperature. For small interconnects aluminium or silver as metallization material might be considered due to better resistivity values than copper. In this investigation the migration effects in nanoscaled interconnects as well as the dynamic void formation for different interconnect materials are presented.
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