Impact of silicon nitride CESL on NLDEMOS transistor reliability |
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| Authors: | G. Beylier S. Bruyère D. Benoit G. Ghibaudo |
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| Affiliation: | 1. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece;2. IMEP-LAHC Lab. in Minatec, Parvis Louis Néel, 38016 Grenoble Cedex 16, France;3. STMicroelectronics, 38921 Crolles, France;1. Institute of Mechatronic Engineering, National Taipei University of Technology, 1 Sec. 3, Zhongxiao E. Rd., Taipei 106 Taiwan, ROC;2. Department of Electronic Engineering, Ming-Chuan University, 5 De Ming Rd., Gui Shan, Taoyuan 333 Taiwan, ROC;3. Department of Mechanical Engineering, Chung Yuan Christian University, 200, Chung Pei Rd., Chung Li, Taoyuan 320 Taiwan, ROC;4. Department of Mechatronic Technology, National Taiwan Normal University, 162, Sec. 1, Heping E. Rd., Taipei 106 Taiwan, ROC |
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| Abstract: | Aging of the linear drain current during OFF stress on a N-type lateral drain extended MOS is shown to be induced by the amorphous silicon nitride Contact Etch Stop Layer (CESL). A design of experiment on its PECVD conditions enables to demonstrate that the higher its Si-rich composition or at least of its interface, the higher the degradation. Supported by TCAD simulations, we propose a charge displacement model in the CESL that leads to the depletion of the extended drain region during stress explaining the on-resistance increase monitored by the linear drain current. |
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