Failure analysis of a thin-film nitride MEMS package |
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| Authors: | Q. Li J.F.L. Goosen J.T.M. van Beek F. van Keulen K.L. Phan G.Q. Zhang |
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| Affiliation: | 1. Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610 Teronoh, Perak, Malaysia;2. Department of Physics, Kohat University of Science and Technology, Kohat, KPK, Pakistan;3. Department of Electrical Engineering, University of Engineering and Technology, Lahore, Pakistan |
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| Abstract: | In this paper, the failure mechanism of a thin-film nitride MEMS package is studied by an integrated test structure. The cause of the failure is investigated by advanced characterization techniques and accelerated tests on the packaging material. From the research, we can conclude that PECVD silicon nitride is a proper sealing material for thin-film packaging because of its good sealing property. However, outgassing of this material, at elevated temperature, remains the main concern for the reliability. |
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