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Reliability and failure in single crystal silicon MEMS devices
Authors:A Neels  A Dommann  A Schifferle  O Papes  E Mazza
Affiliation:1. CSEM, Microsystems Technology, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland;2. ETHZ, IMES, Tannenstrasse 3, 8092 Zürich, Switzerland;3. EMPA, Federal Institute of Materials Testing and Research, Ueberlandstr. 129, 8600 Duebendorf, Switzerland;1. IMEC, Kapeldreef 75, Leuven B-3001, Belgium;2. University of Twente, Postbus 217, Enschede, 7500 AE, Netherlands;3. FB 2.047, NXP Semiconductors, Gerstweg 2, Nijmegen, 6534 AE, Netherlands;1. Peter Grünberg Institut 9 (PGI-9/IT), JARA-FIT, Forschungszentrum Jülich, 52425 Jülich, Germany;2. SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France;1. College of Materials Science and Engineering, Heilongjiang Institute of Science and Technology, Harbin 150022, PR China;2. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116085, PR China;1. Università degli Studi di Torino – Dipartimento di Scienze della Terra Via Valperga Caluso, 35-10125 Torino, Italy;2. Politecnico di Torino – DISEG – C.so duca degli Abruzzi, 24-10129 Torino, Italy;1. Institute of Physical Chemistry, University of Heidelberg, D-69120 Heidelberg, Germany;2. General Physics Institute, Russian Academy of Sciences, 119991 Moscow, Russian Federation
Abstract:In single crystal silicon (SCSi) MST devices, crystalline imperfection is recognized to favor failure. Defects are introduced by DRIE etching which is commonly used in SCSi structuring. However, thermal annealing improves the crystal quality. High resolution X-ray diffraction methods such as the rocking curve method and reciprocal space mapping can monitor crystalline imperfection in SCSi devices. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence of the SCSi deformation by applying a mechanical force. Our investigations also include the numerical simulation of deformations.
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