IGBT modules robustness during turn-off commutation |
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| Authors: | G Busatto C Abbate B Abbate F Iannuzzo |
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| Affiliation: | 1. IMEC, Kapeldreef 75, Leuven B-3001, Belgium;2. University of Twente, Postbus 217, Enschede, 7500 AE, Netherlands;3. FB 2.047, NXP Semiconductors, Gerstweg 2, Nijmegen, 6534 AE, Netherlands;1. CISUC – Center for Informatics and Systems of University of Coimbra, Portugal;2. UDI/IPG – Research Unit, Polytechnic of Guarda, Portugal;3. Department of Informatics Engineering, University of Coimbra, Portugal;1. Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan;2. The International Centre for the Study of East Asian Development, 1-8 Hibikino, Wakamatsu-ku, Kitakyushu, Japan;1. Institute of Catalysis, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria;2. Institute of Organic Chemistry with Centre of Phytochemistry, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria |
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| Abstract: | The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different driving conditions is presented. Several devices of different generations, current and voltage ratings have been considered. The experimental characterisation has been performed by means of a non-destructive experimental set-up where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour. The experimental analysis confirms the very good robustness of high power IGBT modules which can withstand large current overstress well beyond the declared RBSOA limits even at temperatures larger than those one declared by manufacturers. A comparison between IGBT device generation is also presented. |
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