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Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy |
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| Authors: | S Novikov J Sinkkonen T Nikitin L Khriachtchev M Räsänen E Haimi |
| Affiliation: | 1. Electron Physics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland;2. Laboratory of Physical Chemistry, University of Helsinki, P.O.Box 55, FIN-00014, Finland;3. Laboratory of Materials Science, Helsinki University of Technology, P.O. Box 6200, FIN-02015 HUT, Finland |
| Abstract: | Free-standing SiOx films were prepared by molecular beam deposition following back side Silicon (Si) wafer etching in tetramethyl ammonium hydroxide (TMAH) solution. Transmission Electron Microscopy confirms the presence of Si nanocrystals in the as-prepared film. Raman spectroscopy show that deep structural film reorganization appears during high temperature laser treatment. The laser annealing decreases photoluminescence from the films. |
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