| 高温真空分解V2O5制备VO2 |
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| 引用本文： | 韩素兰. 高温真空分解V2O5制备VO2[J]. 机械科学与技术, 2006, 25(7): 806-808 |
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| 作者姓名： | 韩素兰 |
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| 作者单位： | 华北水利水电学院,机械工程系,郑州,450011 |
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| 摘 要： | 尝试采用真空分解V2O5熔体的方法制备高纯度的VO2,通过XRD和SEM等方法进行了分析。结果表明,该方法可以直接获得高纯度的VO2的沉积层,沉积层为连续单相多晶组织。当熔体以小于10℃/h的升温速率加热到1350℃,真空度控制为10-6atm,所获得的沉积层的电阻突变量级达到最大为4~5,相变温度为68℃,相变温度滞后为1℃~2℃。
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| 关 键 词： | VO2 V2O5 真空分解 |
| 文章编号： | 1003-8728（2006）07-0806-03 |
| 收稿时间： | 2004-12-31 |
| 修稿时间： | 2004-12-31 |
Preparation of VO2 Through Vacuum Decomposition of Metted V2O5 at High Temperature |
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| Han Sulan. Preparation of VO2 Through Vacuum Decomposition of Metted V2O5 at High Temperature[J]. Mechanical Science and Technology for Aerospace Engineering, 2006, 25(7): 806-808 |
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| Authors: | Han Sulan |
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| Abstract: | The vacuum decomposition was analyzed.By using XRD and SEM the analysis shows that a continuous VO_2 single phase layer can be prepared by the decomposition.When the VO_2 was heated at a rate less than 10 ℃/h to the temperature of 1350 ℃ and its vacuum pressure kept at 10~(-6)atm,the electrical resistance of VO_2 layer mutate significantly up to 4~5 orders of magnitude,at the temperature of 68 ℃,the hysterisis of which is 1 ℃~2 ℃. |
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| Keywords: | VO2 V2O5 |
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