Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy |
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Authors: | Ok-Hyun Nam Tsvetanka S Zheleva Michael D Bremser Robert F Davis |
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Affiliation: | (1) Department of Materials Science and Engineering, North Carolina State University, Box 7907, 27695-7907 Raleigh, NC |
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Abstract: | Lateral epitaxial growth and coalescence of GaN regions over SiO2 masks previously deposited on GaN/AlN/6H-SiC(0001) substrates and containing 3 μm wide rectangular windows spaced 7 μm apart
have been achieved. The extent and microstructural characteristics of these regions of lateral overgrowth were a complex function
of stripe orientation, growth temperature, and triethylgallium (TEG) flow rate. The most successful growths were obtained
from stripes oriented along 〈1
00〉 at 1100°C and a TEG flow rate of 26 μmol/min. A density of ∼109 cm−2 threading dislocations, originating from the underlying GaN/AlN interface, were contained in the GaN grown in the window
regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The surfaces of the coalesced
layers had a terrace structure and an average root mean square roughness of 0.26 nm. |
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Keywords: | Coalescence gallium nitride (GaN) lateral epitaxial overgrowth metalorganic vapor phase epitaxy (MOVPE) selective growth |
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