| 钛酸钡系PTCR半导体陶瓷界面态分析 |
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| 引用本文： | 张道礼,曹明贺,龚树萍,周东祥. 钛酸钡系PTCR半导体陶瓷界面态分析[J]. 压电与声光, 2000, 22(1): 40-42 |
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| 作者姓名： | 张道礼 曹明贺 龚树萍 周东祥 |
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| 作者单位： | 华中理工大学,电子科学与技术系,武汉,430074 |
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| 摘 要： | 对形成钛酸钡系半导瓷PTCR效应的界面态进行了探讨，分析了在居里点以上由于界面态和介电常数的共同作用引起的材料电阻率猛增几个数量级的原因；同时对钛酸钡系PTCR半导瓷界面态的组成进行了研究，并提出一种直接测量界面态密度的方法。
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| 关 键 词： | 钛酸钡系 半导瓷PTCR陶瓷 界面态 |
| 文章编号： | 10004-2474-（2000）01-0040-03 |
| 修稿时间： | 1999-07-21 |
On the Interface State of BaTiO3-based PTCR Semiconducting Ceramics |
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| ZHANG Dao-li,CAO Ming-he,GONG Shu-ping,ZHOU Dong-xiang. On the Interface State of BaTiO3-based PTCR Semiconducting Ceramics[J]. Piezoelectrics & Acoustooptics, 2000, 22(1): 40-42 |
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| Authors: | ZHANG Dao-li CAO Ming-he GONG Shu-ping ZHOU Dong-xiang |
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| Affiliation: | ZHANG Dao-li,CAO Ming-he,GONGShu-ping,ZHOU Dong-xiang;(Dept.of Electronic Science and Technology,Huazhong University of Science andTechnoly,Wuhan 430074,China) |
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| Abstract: | The interface state of BaTiO3 semiconducting celamics, which has a significant influence on the PTCR effect was analyzed. Above the curie temperture,the co-interacton of the interface state and the dielectric constant on the resistiblty jump has been studied.According to defect chemistry of BaTiO3-based semiconductor ceramics,the composition of the interface state was researched. Amethod of the interface state density measurement was proposed. |
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| Keywords: | BaTiO3-based semiconductor ceramics PTCR ceramics interface state interface state density |
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