| Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes |
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| 引用本文： | Niu Zhichuan,Han Qin,Ni Haiqiao,Yang Xiaohong,Xu Yingqiang,Du Yun,Zhang Shiyong,Peng Hongling,Zhao Huan,Wu Donghai,Li Sh. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报, 2005, 26(9): 1860-1864 |
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| 作者姓名： | Niu Zhichuan Han Qin Ni Haiqiao Yang Xiaohong Xu Yingqiang Du Yun Zhang Shiyong Peng Hongling Zhao Huan Wu Donghai Li Sh |
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| 作者单位： | [1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [2]中国科学院半导体研究所国家光电子工艺中心,北京100083 |
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| 基金项目： | 国家自然科学基金 , 国家高技术研究发展计划(863计划) , 国家重点基础研究发展计划(973计划) |
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| 摘 要： | Material growth and device fabrication of the first 1.3μm quantum well (QW) edge emitting laser diodes in China are reported.Through the optimization of the molecular beam epitaxy (MBE) growth conditions and the tuning of the indium and nitrogen composition of the GaInNAs QWs,the emission wavelengths of the QWs can be tuned to 1.3μm.Ridge geometry waveguide laser diodes are fabricated.The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm2 for the laser diode structures with the cleaved facet mirrors.The output light power over 30mW is obtained.
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| 关 键 词： | GaAs based materials GaInNAs quantum wells molecular beam epitaxy laser diodes |
| 文章编号： | 0253-4177(2005)09-1860-05 |
| 修稿时间： | 2005-06-17 |
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes |
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| Niu Zhichuan,Han Qin,Ni Haiqiao,Yang Xiaohong,Xu Yingqiang,Du Yun,Zhang Shiyong,Peng Hongling,Zhao Huan,Wu Donghai,Li Shuying,He Zhenhong,Ren Zhengwei,and Wu Ronghan. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. Chinese Journal of Semiconductors, 2005, 26(9): 1860-1864 |
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| Authors: | Niu Zhichuan Han Qin Ni Haiqiao Yang Xiaohong Xu Yingqiang Du Yun Zhang Shiyong Peng Hongling Zhao Huan Wu Donghai Li Shuying He Zhenhong Ren Zhengwei and Wu Ronghan |
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| Affiliation: | Niu Zhichuan1,Han Qin2,Ni Haiqiao1,Yang Xiaohong2,Xu Yingqiang1,Du Yun2,Zhang Shiyong1,Peng Hongling1,Zhao Huan1,Wu Donghai1,Li Shuying1,He Zhenhong1,Ren Zhengwei1,and Wu Ronghan2 |
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| Abstract: | |
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| Keywords: | GaAs based materials GaInNAs quantum wells molecular beam epitaxy laser diodes |
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