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Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes
Authors:Xuyong Yang  Evren Mutlugun  Yongbiao Zhao  Yuan Gao  Kheng Swee Leck  Yanyan Ma  Lin Ke  Swee Tiam Tan  Hilmi Volkan Demir  Xiao Wei Sun
Affiliation:1. Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, , Nanyang Avenue, Singapore, 639798 Singapore;2. Department of Electrical and Electronics Engineering, Department of Physics, UNAM – Institute of Materials Science and Nanotechnology, Bilkent University, , Bilkent, Ankara, 06800 Turkey;3. School of Physical and Mathematical Sciences, Nanyang Technological University, , Singapore, 639798 Singapore;4. State Key Lab of Luminescence Materials and Devices, Institute of Optical Communication Materials, South China University of Technology, , Guangdong, 510641 China;5. Institute of Materials Research and Engineering, A* STAR (Agency for Science, Technology and Research), , Singapore, 117602 Singapore;6. South University of Science and Technology, , Shenzhen, Guangdong, 518055 China
Abstract:
Keywords:solution processing  quantum dots  nanoparticles  tungsten oxide  interfacial layer  light‐emitting diodes
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