| RF LDMOS功率器件研制 |
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| 引用本文： | 陈蕾,王帅,姜一波,李科,杜寰. RF LDMOS功率器件研制[J]. 半导体技术, 2010, 35(10): 968-972. DOI: 10.3969/j.issn.1003-353x.2010.10.005 |
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| 作者姓名： | 陈蕾 王帅 姜一波 李科 杜寰 |
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| 作者单位： | 中国科学院,微电子研究所,北京,100029;中国科学院,微电子研究所,北京,100029;中国科学院,微电子研究所,北京,100029;中国科学院,微电子研究所,北京,100029;中国科学院,微电子研究所,北京,100029 |
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| 摘 要： | 基于ISE TCAD模拟软件对RF LDMOS器件的工艺流程和器件结构进行了优化设计,采用带栅极金属总线的版图结构降低栅电阻,同时简化了LDMOS器件的封装设计.通过实际流片和测试分析,重点讨论了漂移区注入剂量和漂移区长度对LDMOS器件的转移特性、击穿特性、截止频率及最大振荡频率的影响.测试结果表明该器件的阈值电压为1.8 V,击穿电压可达70 V,截止频率和最大振荡频率分别为9 GHz和12.6 GHz,并可提供0.7 W/mm的输出功率密度.
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| 关 键 词： | 射频LDMOS功率器件 击穿电压 栅极金属总线 截止频率 最大振荡频率 |
Design and Fabrication of RF Power LDMOS |
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| Chen Lei,Wang Shuai,Jiang Yibo,Li Ke,Du Huan. Design and Fabrication of RF Power LDMOS[J]. Semiconductor Technology, 2010, 35(10): 968-972. DOI: 10.3969/j.issn.1003-353x.2010.10.005 |
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| Authors: | Chen Lei Wang Shuai Jiang Yibo Li Ke Du Huan |
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| Affiliation: | Chen Lei,Wang Shuai,Jiang Yibo,Li Ke,Du Huan(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | Using ISE TCAD simulation soft,the process flow and structure of RF power LDMOS were optimized.By the layout design of gate bus structure,the gate resistance was reduced and the package design of LDMOS was also simplified.Through the wafer fabrication and test,the influences of drift region doping dose,drift region length on LDMOS threshold voltage,breakdown voltage and frequency character were discussed.The results show that the breakdown voltage is 70 V,and threshold voltage is 1.8 V.The cutoff frequency ... |
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| Keywords: | RF power LDMOS breakdown voltage gate bus cutoff frequency max oscillator frequency |
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