| 4H-SiC MESFET的新型经验电容模型 |
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| 引用本文： | 曹全君,张义门,张玉明,汤晓燕,吕红亮,王悦湖. 4H-SiC MESFET的新型经验电容模型[J]. 固体电子学研究与进展, 2008, 28(1): 33-37 |
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| 作者姓名： | 曹全君 张义门 张玉明 汤晓燕 吕红亮 王悦湖 |
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| 作者单位： | 西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 基于器件工作机理,提出了一种新型的4H-SiC MESFET经验大信号电容模型。模型参数提取采用Lev-enberg-Marquardt优化算法,提取的模型主要参数具有一定物理意义。C-V特性的模型模拟结果与实验数据的比较表明两者符合良好。该模型还与CAD工具的通用电容模型进行了比较,结果表明新模型具有更高的精度。
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| 关 键 词： | 4H-碳化硅 金属半导体场效应晶体管 大信号电容 经验模型 Levenberg-Marquardt方法 |
| 文章编号： | 1000-3819(2008)01-033-05 |
| 修稿时间： | 2007-04-24 |
A Novel Empirical Large Signal Capacitance Model for 4H-SiC MESFET |
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| CAO Quanjun,ZHANG Yimen,ZHANG Yuming,TANG Xiaoyan,LV Hongliang,WANG Yuehu. A Novel Empirical Large Signal Capacitance Model for 4H-SiC MESFET[J]. Research & Progress of Solid State Electronics, 2008, 28(1): 33-37 |
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| Authors: | CAO Quanjun ZHANG Yimen ZHANG Yuming TANG Xiaoyan LV Hongliang WANG Yuehu |
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| Affiliation: | CAO Quanjun ZHANG Yimen ZHANG Yuming TANG Xiaoyan LV Hongliang WANG Yuehu(Key Lab.of Education Ministry for Wide B,-gap Semiconductor Materials , Devices,Microelectronics Institute of Xidian University,Xi'an,710071,CHN) |
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| Abstract: | A new empirical large signal capacitance model for 4H-SiC MESFETs is presented based on the operational principle of devices.The Levenberg-Marquardt method is used to optimize the parameter extraction.And the main extracted parameters are physical proposed.The comparison of simulation results with experiment data of C-V characteristics shows that they are in good agreement.A comparison of the present model with general capacitance models used in CAD tools is also made,which shows the present model has bette... |
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| Keywords: | 4H-SiC MESFET large signal capacitance empirical model Levenberg-Marquardt method |
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