| 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数 |
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| 引用本文： | 屠晓光,赵雷,陈平,陈少武,左玉华,余金中,王启明. 利用保偏光纤马赫-曾德(MZ)干涉仪测量薄膜材料电光系数[J]. 半导体学报, 2007, 28(7): 1012-1016 |
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| 作者姓名： | 屠晓光 赵雷 陈平 陈少武 左玉华 余金中 王启明 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083;中国科学院半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) , 国家自然科学基金 |
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| 摘 要： | 利用保偏光纤MZ干涉仪测量了光学各向异性薄膜材料的电光效应.与传统MZ干涉仪相比,该干涉仪中所有的部件都采用保偏光纤进行连接.光源采用一个偏振输出最大功率为10mW的DFB激光器,用以得到高的信噪比.用该激光器测量超晶格材料的电光系数,同时用GaAs,KTP和GaN材料作为对比材料.测量的电光系数和已有结果有较好的可比性.
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| 关 键 词： | 电光效应 保偏光纤 MZ干涉仪 |
| 文章编号： | 0253-4177（2007）07-1012-05 |
| 收稿时间： | 2007-01-28 |
| 修稿时间： | 2007-01-28 |
Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer |
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| Tu Xiaoguang,Zhao Lei,Chen Ping,Chen Shaowu,Zuo Yuhu,Yu Jinzhong and Wang Qiming. Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer[J]. Chinese Journal of Semiconductors, 2007, 28(7): 1012-1016 |
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| Authors: | Tu Xiaoguang Zhao Lei Chen Ping Chen Shaowu Zuo Yuhu Yu Jinzhong Wang Qiming |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy.Unlike a common MZ interferometer,all the components are connected via polarization-maintaining fibers.At the same time,a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio.Here,we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs,KTP,and GaN as comparative samples.The measured EO coefficients show good comparability with the others. |
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| Keywords: | electro-optic effect polarization-maintaining fiber Mach-Zehnder interferometer |
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