高功率808 nm AlGaAs/GaAs基半导体激光器巴条的热耦合特征

利用红外热成像技术和有限元方法在实验和理论上研究了高功率808 nm半导体激光器巴条热耦合特征,给出了稳态和瞬态热分析,呈现了详细的激光器巴条热耦合轮廓.发现器件稳态温升随工作电流呈对数增加,热耦合也随之增加且主要发生在芯片级.另外,作者利用热阻并联模型解释了芯片级热时间常数随工作电流减小的现象.

Thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bars

The thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bar were investigated experimentally and theoretically using infrared thermography and finite element method. We have performed the steady-state and transient analysis. A detailed profile of thermal crosstalk in laser diode bar was presented in this paper. The steady-state temperature rise has a logarithmical dependence on the total operation current, and the thermal crosstalk between emitters increases with the current density. Furthermore, the transient thermal analysis suggested that the thermal crosstalk occurred mainly in chip. Using thermal resistance parallel connection model, we explained the phenomena that the time constant of chip decreased with the increase of total operation current.