p-GaAs同质结太赫兹探测器的优化与性能

从提高p-GaAs同质结太赫兹探测器量子效率出发,在考虑温度和偏压等参数的影响后,优化了谐振腔增强的p-GaAs同质结太赫兹探测器的材料及结构参数,使探测器的量子效率提高到了17%.并计算了探测器的响应率、探测率和偏压、温度、光谱频率的关系,得到了最佳工作偏压(10~40 m V)、最佳工作温度(8 K)和最大探测率(4.1×1010cm Hz1/2/W).而通过施加一对匹配的反射镜来构造谐振腔的设计,所能获得的极限量子效率为26%,极限探测率和响应率分别为5.7×1010cm Hz1/2/W、25.9 A/W.

Optimization and performance of p-GaAs homojunction THz detectors

In order to improve the quantum efficiency of THz detectors made of p-GaAs homojunction, the effects of temperature and bias voltage were taken into account. By optimizing the materials and structure parameters of the resonant cavity enhanced p-GaAs HIWIP detectors, its quantum efficiency was increased to 17%. The relationships among the responsivity and detectivity of the detector, bias voltage, temperature and spectral frequency were simulated, leading to an optimized bias voltage range(10~40mV), an optimal temperature(< 8K) and a maximum detectivity(4.1×1010cm Hz1/2/W). By applying a pair of matched mirror, the ultimate quantum efficiency, the detectivity and the responsivity are 26%, 5.7×1010cm Hz1/2/W and 25.9 A/W, respectively.