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锁模激光照射下InGaAs p-i-n管的负电压响应机理
引用本文:胡伟,孙晓泉,豆贤安.锁模激光照射下InGaAs p-i-n管的负电压响应机理[J].红外与毫米波学报,2015,34(1):36-40.
作者姓名:胡伟  孙晓泉  豆贤安
作者单位:电子工程学院脉冲功率与激光技术国家重点实验室,安徽合肥,230037
基金项目:重点实验室基金项目(13J1003)
摘    要:在考察InGaAs p-i-n管对锁模激光响应的实验中,发现其响应电压在经历一个快速的上升沿和缓慢的拖尾以后有一个明显的负电压.在二极管的线性响应阶段,负电压与正电压的峰值之比大约在0.18左右,且不随激光脉冲能量的增大而改变;在二极管的非线性响应阶段,随着光脉冲能量的增大,负电压逐渐变小最终消失.通过对p-in管的等效电路模型的建立以及对RLC振荡电路方程的求解,认为负电压的产生是由于二极管表现出了可观的电感特性,而负电压的消失是由于二极管的结电容随着光脉冲能量增大而增大的结果.该研究结果对InGaAs p-i-n管的设计和制造具有一定的理论指导作用.

关 键 词:锁模激光  负电压  等效电路  电感  结电容
收稿时间:2013/12/9
修稿时间:2014/1/11 0:00:00

Analysis of the negative voltage-response in the InGaAs p-i-n photodiode under mode-locked laser illumination
HU Wei,SUN Xiao-Quan and DOU Xian-An.Analysis of the negative voltage-response in the InGaAs p-i-n photodiode under mode-locked laser illumination[J].Journal of Infrared and Millimeter Waves,2015,34(1):36-40.
Authors:HU Wei  SUN Xiao-Quan and DOU Xian-An
Affiliation:State Key Laboratory of Pulsed Power Laser TechnologyElectronic Engineering Institute,State Key Laboratory of Pulsed Power Laser TechnologyElectronic Engineering Institute,State Key Laboratory of Pulsed Power Laser TechnologyElectronic Engineering Institute
Abstract:An interesting phenomenon of transient photo-voltage in the InGaAs p-i-n photo-detector induced by pico-second mode-locked lasers illumination was found. The response voltage presents an obvious negative valley after a rapid rising and a slow relaxation trailing. The amplitude of the negative and positive peak voltage increases with the fixed ratio about 20% with the linear characteristic of the photodiode, then the ratio decreases until the negative valley disappears with the pulse energy increasing with the nonlinear characteristic of the photodiode. By establishing the p-i-n equivalent circuit model and solving the RLC oscillation equation, the appearance and disappearance of the phenomenon can be explained by the non-negligible inductance and the increasing junction capacitance.
Keywords:HU Wei  SUN Xiao-Quan  DOU Xian-An
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