氦离子预注入对钨中氘滞留行为的影响

利用高能离子注入机和直线等离子体模拟装置,本文研究了高能氦离子预注入对氘等离子体辐照后钨中氘滞留行为的影响。采用FIB-SEM、TEM、GD-OES和TDS等分析方法,分析了氦离子预注入对钨中氘滞留行为的影响。结果表明：氦离子预注入在辐照损伤区域形成大量氦泡,钨经过氘等离子体辐照后,表面的氘泡数量明显低于未经过氦离子预注入的样品。GD-OES分析中可以看到在氦捕获位处氘滞留浓度明显升高,同时氦离子预注入增加了氘在钨中的扩散深度,结合TDS分析可知氦离子预注入增加了氘在钨中的滞留总量,这是由于氦离子预注入后,形成的缺陷又为钨中氘的俘获提供大量新的位点,从而导致钨中的氘滞留量明显提高。

Effect of helium ion pre-implantation on deuterium retention behavior in tungsten

The effect of high-energy helium ion pre-implantation on deuterium retention behavior in tungsten was studied by using high-energy ion implanter and linear experimental plasma system (LEPS). FIB-SEM, TEM, GD-OES and TDS measurements were used to analyze the effect of helium ion pre-implantation on deuterium retention in tungsten from both microstructure and deuterium concentration depth profile. The results show that a large number of helium bubbles are formed in the irradiated area by implantation of helium ions. After deuterium plasma exposure, the number of deuterium bubbles are was significantly lower than that of sample without helium ion pre-implantation. GD-OES analysis shows that deuterium concentration depth profile increases obviously at the helium capture position, and the helium ion pre-implantation increases the diffusion depth of deuterium in tungsten. TDS analysis also shows that helium ion pre-implantation increases the retention of deuterium in tungsten. This can be attributed to the defects formed after helium ions pre-implantation provide a large number of new trap sites for deuterium capture in tungsten, which leads to the significant increase of deuterium retention in tungsten.