Fabrication of Ternary Phase Composition-Spread Thin Film Libraries and Their High-Throughput Characterization: Ti1?x?yZrxHfyO2 for Bandgap Engineering |
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Authors: | Y. Yamada T. Fukumura M. Ikeda M. Ohtani H. Toyosaki A. Ohtomo F. Matsukura H. Ohno M. Kawasaki |
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Affiliation: | (1) Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;(2) Japan Science and Technology Agency, Kawaguchi 332-0012, Japan;(3) Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;(4) Combinatorial Materials Exploration and Technology, National Institute for Materials Science, Tsukuba 305-0044, Japan |
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Abstract: | Ternary phase composition-spread thin film libraries, TiO2-ZrO2-HfO2, were synthesized by using a combinatorial pulsed laser deposition system. The composition, crystalline structure, and optical transmission properties were characterized in a high-throughput way. TiO2 doped with Zr and Hf was found to exhibit a wider bandgap than pure TiO2; hence, these compounds can be used as wide gap semiconductors for heteroepitaxial spintronics devices, based on a ferromagnetic semiconductor, Co-doped TiO2. |
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Keywords: | combinatorial library oxide semiconductor TiO2 ferromagnetic semiconductor wide gap |
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