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Fabrication of Ternary Phase Composition-Spread Thin Film Libraries and Their High-Throughput Characterization: Ti1?x?yZrxHfyO2 for Bandgap Engineering
Authors:Y. Yamada   T. Fukumura   M. Ikeda   M. Ohtani   H. Toyosaki   A. Ohtomo   F. Matsukura   H. Ohno  M. Kawasaki
Affiliation:(1) Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;(2) Japan Science and Technology Agency, Kawaguchi 332-0012, Japan;(3) Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;(4) Combinatorial Materials Exploration and Technology, National Institute for Materials Science, Tsukuba 305-0044, Japan
Abstract:Ternary phase composition-spread thin film libraries, TiO2-ZrO2-HfO2, were synthesized by using a combinatorial pulsed laser deposition system. The composition, crystalline structure, and optical transmission properties were characterized in a high-throughput way. TiO2 doped with Zr and Hf was found to exhibit a wider bandgap than pure TiO2; hence, these compounds can be used as wide gap semiconductors for heteroepitaxial spintronics devices, based on a ferromagnetic semiconductor, Co-doped TiO2.
Keywords:combinatorial library  oxide semiconductor  TiO2  ferromagnetic semiconductor  wide gap
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