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Enhanced H2-plasma effects on polysilicon thin-filmtransistors with thin ONO gate-dielectrics
Authors:Chien Kuo Yang Chung Len Lee Tan Fu Lei
Affiliation:Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu;
Abstract:This letter reports that passivation effects of the H2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film on their gate-dielectrics. Compared to the conventional devices with only the SiO2 gate dielectric, the TFT's with Si 3N4 have much more improvement on their subthreshold swing and field-effect mobility after H2-plasma treatment
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