Highly strained InGaP/InGaAs p-HEMT using reduced area growth

Highly strained InGaP/In_0.33Ga_0.67As pseudomorphic high electron mobility transistor (p-HEMT) structures were grown on patterned GaAs substrates. Performance of the highly strained p-HEMTs grown on patterned substrates was compared with that of highly strained p-HEMTs and conventional InGaP/In_0.22Ga_0.78 As p-HEMTs grown on nonpatterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in dc (transconductance and drain saturation current) and rf (cutoff frequency: f_T and maximum oscillation frequency: f_max ) performances as compared with those of the p-HEMTs grown on nonpatterned substrates. The results indicate the potential of highly strained p-HEMTs using reduced area growth for high-speed device applications