| 多晶硅薄膜晶体管自加热效应温度分布的有限元模拟 |
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| 引用本文： | 杨震宇,王明湘,王槐生.多晶硅薄膜晶体管自加热效应温度分布的有限元模拟[J].半导体学报,2008,29(5):954-959. |
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| 作者姓名： | 杨震宇 王明湘 王槐生 |
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| 作者单位： | 苏州大学微电子学系,苏州215021 |
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| 摘 要： | 采用有限元方法模拟了n型MILC低温多晶硅薄膜晶体管在直流自加热应力下器件的温度分布．通过对器件沟道温度分布的稳态及瞬态模拟，研究了器件功率密度、衬底材料类型和器件宽长等关键因素的影响．确认了改善器件自加热退化的有效途径，同时有助于揭示多晶硅薄膜晶体管自加热退化的内在机制．
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| 关 键 词： | 有限元分析 温度分布 薄膜晶体管 自加热退化 稳态及瞬态模拟 |
| 文章编号： | 0253-4177(2008)05-0954-06 |
| 收稿时间： | 9/30/2007 5:10:25 PM |
| 修稿时间： | 2007年9月30日 |
Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress |
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| Yang Zhenyu,Wang Mingxiang and Wang Huaisheng.Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J].Chinese Journal of Semiconductors,2008,29(5):954-959. |
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| Authors: | Yang Zhenyu Wang Mingxiang and Wang Huaisheng |
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| Affiliation: | Department of Microelectronics,Soochow University,Suzhou 215021,China;Department of Microelectronics,Soochow University,Suzhou 215021,China;Department of Microelectronics,Soochow University,Suzhou 215021,China |
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| Abstract: | The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material,and channel width on temperature distribution is analyzed.This study is useful for understanding the mechanism of self-heating degradation,and to find approaches to effectively alleviate the SH effect in device operation. |
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| Keywords: | FEA temperature distribution thin film transistor self-heating degradation steady-state and transient simulation |
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