Mixing of hole states in GaAs/AlAs(110) heterostructures |
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Authors: | V N Chernyshov |
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Affiliation: | 1.Siberian Physical Technical Institute,Tomsk State University,Tomsk,Russia;2.Tomsk Polytechnical University,Tomsk,Russia |
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Abstract: | States in the AlAs/GaAs(12)/AlAs(110) quantum well and AlAs(6)/GaAs(12)(110) superlattice are considered. For analysis of
mixing of light- and heavy-hole states in these structures, a parameter-dependent set of basis functions is suggested and
the values of the parameter at which one of the functions describes basically heavy-hole states and the other light-hole states
are determined. For the energy region considered in the study, four energy levels are determined in the AlAs/GaAs(12)/AlAs(110)
quantum well and, correspondingly, four minibands in the AlAs(6)/GaAs(12)(110) superlattice. Analysis shows that the first
and fourth levels in the quantum well and the first and fourth minibands in the superlattice are related basically to heavy-hole
states. The other two states in the quantum well and the second and third minibands in the super-lattice are structurally
more complex: in these states and minibands, the hole states are noticeably mixed. In these minibands, states are substantially
separated in space and in spin. |
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Keywords: | |
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