| 改用离子注入替代外延生产话筒管 |
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| 引用本文： | 张鸿升.改用离子注入替代外延生产话筒管[J].微电子技术,2002,30(4):62-64. |
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| 作者姓名： | 张鸿升 |
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| 作者单位： | 河南新乡市半导体厂总工办,河南,新乡,453002 |
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| 摘 要： | 结型场效应晶体管，长期来几乎都是采用外延扩散法工艺，随着微电子技术发展，半导体生产的离子注入设备及工艺相继推出，离子注入工艺越来越成熟。本文介绍了应用离子注入替代外延扩散制造话筒管的工艺概况。
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| 关 键 词： | 离子注入 外延生产 话筒管 电容传声器 |
| 文章编号： | 1008-0147(2002)04-62-03 |
Substituting Epitaxy by Ion-implantation in the Production of Microphone Devices |
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| ZHANG Hong-sheng.Substituting Epitaxy by Ion-implantation in the Production of Microphone Devices[J].Microelectronic Technology,2002,30(4):62-64. |
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| Authors: | ZHANG Hong-sheng |
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| Abstract: | The junction field effect transistor used to be produced with epitaxy/diffusion technology. As the rapid development of microelectronics, the equipment of ion-implantation for semiconductor comes up. The purpose of the paper is to make a survey of substituting epitaxy by ion-implantation in the production of microphone devices. |
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| Keywords: | Ion-implantation Electret Microphone device |
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