| Sb掺杂ZnO纳米材料的研究进展 |
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| 引用本文： | 闫勇彦,马勇,朱绍平.Sb掺杂ZnO纳米材料的研究进展[J].重庆科技学院学报(自然科学版),2009,11(4):72-75. |
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| 作者姓名： | 闫勇彦 马勇 朱绍平 |
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| 作者单位： | 重庆师范大学,重庆,400047 |
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| 摘 要： | ZnO纳米材料是一种新型的直接带隙半导体材料,其禁带宽度为3.37eV.Sb掺杂ZnO纳米材料在光电、气敏效应、p型导电等方面具有优良的性质.介绍Sb掺杂ZnO纳米材料在这几方面的最新研究进展.
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| 关 键 词： | ZnO薄膜 Sb掺杂 p型ZnO |
Research Advances in Sb-doped ZnO Nano-material |
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| YAN Yong-yan,MA Yong,ZHU Shao-ping.Research Advances in Sb-doped ZnO Nano-material[J].Journal of Chongqing University of Science and Technology:Natural Science Edition,2009,11(4):72-75. |
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| Authors: | YAN Yong-yan MA Yong ZHU Shao-ping |
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| Affiliation: | YAN Yong-yan MA Yong ZHU Shao-ping(Chongqing Normal University,Chongqing 400047) |
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| Abstract: | ZnO nano-material is one kind of new direct band gap semiconductor material.Its band gap is 3.37ev.Sb-doped ZnO nano-material has fine properties in the electro-optic,the gas-sensing effect and p-type conduction.This article mainly describes the newest research development in these aspects. |
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| Keywords: | ZnO films Sb-doped p-type ZnO |
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