高纯三氧化钨中28种痕量杂质元素的光谱分析

本文研究了用石墨粉抑制WO_3蒸发的机理和8种载体物质促进杂质元素蒸发以及增强谱线强度的效果,选择了最佳的载体和光谱测定条件。拟定了从含2％NaF的石墨粉为载体,采用WSP-2型光栅摄谱仪和直流电弧激发光谱,一次摄谱同时测定高纯WO_3中Al、As、Ba、Be、Bi、Ca、Cd、Co、Cr、Cu、Fe、Ga、Mg、Mn、Mo、Ni、Pb、Sb、Sc、Si、Sn、Ti、V、Y、Yb和Zr等28种杂质元素的直接光谱分析法。方法的测定下限0.003—3ppm,相对标准偏差5.4—30％,测定的最低杂质总量为19.263ppm。

DETERMINATION OF TRACE IMPURITY ELEMENTS IN HIGH-PURITY WO_3 BY SPECTROGRAPHIC ANALYSIS

This paper studies the mechanism of preventing evaporation of WO3 with graphite powder, and describes the effect of improving the intensity of the spectral lines for all determined impurity elements using 8 kinds of carriers. Using 2 %NaF as carrier, 28 kinds of determined impurity elements can be simultaniously determined in the high-purity WO3 by conventional d.c. exitation with WSP-1 model grating spectrometer. The detection limits for various determined elements are found to be from 0.003 to 3 ppm. The relative standard deviation is 5.4-20%. The minimum total contents of the determined impurity elements are 19.3 ppm by this method.