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A high performances CMOS CCII and high frequency applications |
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| Authors: | Samir Ben Salem Mourad Fakhfakh Dorra Sellami Masmoudi Mourad Loulou Patrick Loumeau Nouri Masmoudi |
| Affiliation: | (1) Laboratoire d’Electronique et des Technologies de l’Information (LETI), University of Sfax, Sfax Engineering School, BP W, 3038 Sfax, Tunisia;(2) Research Unit on Intelligent Control, Design and Optimization of Complex Systems (ICOS), University of Sfax, Sfax Engineering School, BP W, 3038 Sfax, Tunisia;(3) Département Comélec, Ecole Nationale Supérieure des Télécommunications, Paris, France |
| Abstract: | In this paper, we propose an improved translinear based CCII configuration. Heuristic algorithm is used for optimal sizing regarding static and dynamic performances. PSPICE simulations for AMS 0.35 μm CMOS technology show that the current and voltage bandwidths are respectively 2.6 GHz and 3.9 GHz, and the parasitic resistance at port X (R X ) has a value of 18 Ω for a control current of 100 μA. The improved configuration is used as a building block into high frequency design applications: a current controlled oscillator and a tunable fully integrable band pass filter. The oscillator frequency can be tuned in the range of 290–475 MHz] by a simple variation of a DC current. The central frequency of the band pass filter can be varied in the range of 1.22–1.56 GHz] and the quality factor vary in the range 8–306] with a simple variation of a DC current. |
| Keywords: | CMOS current conveyors Optimization heuristic Oscillators RF band-pass filters |
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