| 940 nm无铝双量子阱列阵半导体激光器 |
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| 引用本文： | 万春明,王慧,曲轶.940 nm无铝双量子阱列阵半导体激光器[J].中国激光,2002,29(12):1061-1063. |
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| 作者姓名： | 万春明 王慧 曲轶 |
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| 作者单位： | 1. 长春理工大学,吉林,长春,130022
2. 空军第二航空学院,吉林,长春,130022 |
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| 摘 要： | 分析了影响列阵半导体激光器极限输出功率的因素。利用MOCVD研制了无铝双量子阱列阵半导体激光器。无铝列阵激光器的峰值波长为 940 2nm ,半峰宽为 2nm ,连续输出功率为 10W ,斜率效率为 1 0 9W A。
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| 关 键 词： | 量子阱 半导体激光器 列阵 |
| 收稿时间： | 2002/5/10 |
940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser |
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| WAN Chun-ming ,WANG Hui ,QU Yi Changchun University of Science and Technology,Changchun,Jilin The Second Aeronautical Institute of Air Force,Changchun,Jilin.940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser[J].Chinese Journal of Lasers,2002,29(12):1061-1063. |
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| Authors: | WAN Chun-ming WANG Hui QU Yi Changchun University of Science and Technology Changchun Jilin The Second Aeronautical Institute of Air Force Changchun Jilin |
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| Affiliation: | WAN Chun-ming 1,WANG Hui 2,QU Yi 1 1Changchun University of Science and Technology,Changchun,Jilin 130022 2The Second Aeronautical Institute of Air Force,Changchun,Jilin 130022 |
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| Abstract: | The factors which influence the ultimate output power of semiconductor laser are analyzed. The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD. As a result, the peak wavelength of the aluminum-free two-quantum-well semiconductor laser is 940 2 nm, the full-width-half-maximum (FWHM) is 2 nm, the continuous output power is 10 W, and the incremental efficiency is 1 09 W/A. |
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| Keywords: | quantum well semiconductor laser array |
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