| 采用金-金键合工艺制备垂直结构氮化镓发光二极管(英文) |
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| 引用本文： | 欧欣,陈静,武爱民,孙家胤. 采用金-金键合工艺制备垂直结构氮化镓发光二极管(英文)[J]. 功能材料与器件学报, 2010, 16(3) |
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| 作者姓名： | 欧欣 陈静 武爱民 孙家胤 |
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| 作者单位： | 信息功能材料国家重点实验室,中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 本文在采用键合工艺制备以硅为衬底的氮化镓发光二极管的工艺过程中分别尝试采用金-金,金-硅,铝-铝,铝-硅键合对。研究发现金-金键合对得到了100%的键合面积。键合工艺结束后,采用KrF激光分离氮化镓发光二极管的器件层和原蓝宝石衬底。通过超声波造影仪(SAM)和扫描电子显微镜(SEM)研究了金属键合工艺过程中相应的键合机制。
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| 关 键 词： | 晶圆键合 氮化镓 发光二极管 剥离 |
Au- Au Wafer Bonding in Vertical- Structure GaN LED Fabrication |
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| OU Xin,CHEN Jing,WU Ai-min,SUN Jia-yin. Au- Au Wafer Bonding in Vertical- Structure GaN LED Fabrication[J]. Journal of Functional Materials and Devices, 2010, 16(3) |
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| Authors: | OU Xin CHEN Jing WU Ai-min SUN Jia-yin |
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| Abstract: | Metallic bonding including Au - Au,Au - Si, AI-AI and AI - Si bonding were attempted,and the Au - Au diffusion bonding with the best interface quality and nearly 100% bonded area was used to fabricate the vertical InGaN -GaN light-emitting diodes (LEDs) on 50 -mm Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapphire substrate. The underlying mechanisms in above metallic bonding pairs were investigated by scanning acoustic micrographs (SAM) and scanning electron microscope (SEM). |
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| Keywords: | Wafer bonding GaN light - emitting diode lift - off |
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