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半导体表面场产生太赫兹电磁波的机理研究
引用本文:孙红起,赵国忠.半导体表面场产生太赫兹电磁波的机理研究[J].现代科学仪器,2006,16(2):54-58.
作者姓名:孙红起  赵国忠
作者单位:首都师范大学物理系,北京,100037
基金项目:中国科学院资助项目;北京市教委科技发展计划项目
摘    要:介绍了两种由半导体表面场产生THz辐射的物理机制:一种是利用半导体表面的耗尽层电场,另一种是利用半导体表面的Dember电场加速载流子,形成瞬态光电流而辐射出电磁波.文中对这两种模型的辐射机理进行了深入的讨论,对利用表面场产生THz辐射的机理有了深刻的认识,为高效、便捷、低成本的THz辐射源的研究提供了基础.

关 键 词:THz辐射  耗散层电场  丹伯尔电场  宽带隙  窄带隙
收稿时间:2006/3/27
修稿时间:2006年3月27日

Study on the Mechanism of THz Electromagnetic Wave from Semiconductor Surface Field
Sun Hongqi,Zhao Guozhong.Study on the Mechanism of THz Electromagnetic Wave from Semiconductor Surface Field[J].Modern Scientific Instruments,2006,16(2):54-58.
Authors:Sun Hongqi  Zhao Guozhong
Abstract:Two models of generating THz radiation by semiconductor surface field are introduced: one is that the carriers are accelerated by the depletion field of semiconductor surface;the another is that the carriers are accelerated by the photo-Dember field.THz wave radiated from the transient photocurrent due to the acceleration of photocarriers.Detail discussion on the radiation mechanisms based on the two models makes people have more profound understanding to the mechanism of THz radiation by surface field.This he useful information for the investigation of THz radiation sources which are high efficient,convenient and low cost will provided.
Keywords:THz radiation  depletion field  dember-field  wide band-gap  narrow band-gap
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