Noise temperature in silicon in the hot electron region

The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature Tnversus field E may be approximated byT_{n}/T_{0}= 1 + γ(E/E_{c})^{2}with T0= lattice temperature, Ec= saturation field, γ = const.